中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser

文献类型:专利

作者AYABE MASAAKI; MITA ARIO; MATSUDA OSAMU
发表日期1986-05-14
专利号JP1986095591A
著作权人SONY CORP
国家日本
文献子类发明申请
其他题名Semiconductor laser
英文摘要PURPOSE:To simply inspect and measure whether an FFP has a symmetry or not even at the stage that it is not yet mounted on a heat sink or a header by forming a plurality of photodetectors for receiving the laser light from a semiconductor laser on the surface of a semiconductor substrate, thereby accurately positioning and bonding the chip to the substrate. CONSTITUTION:Three PIN photodiodes PDl, PDc, PDr are disposed in parallel with a center line 6 of a semiconductor substrate 1 on the surface of a monitor region 7 of the substrate A probe 9l is contacted with the surface of the photodiode PDl of the left side as seen from a semiconductor laser chip 2 side, a probe 9l is contacted with the surface of the photodiode PDr of the right side, reverse bias voltage of the same value is applied individually to the photodiodes PDl and PDr to detect the photocurrents flowed to the photodiodes PDl and PDr at that time, thereby comparing the photocurrents. If there is no difference exceeding the allowable preset range between the photocurrents, the laser is judged as having symmetry in the FFP.
公开日期1986-05-14
申请日期1984-10-16
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70593]  
专题半导体激光器专利数据库
作者单位SONY CORP
推荐引用方式
GB/T 7714
AYABE MASAAKI,MITA ARIO,MATSUDA OSAMU. Semiconductor laser. JP1986095591A. 1986-05-14.

入库方式: OAI收割

来源:西安光学精密机械研究所

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