Semiconductor laser
文献类型:专利
作者 | AYABE MASAAKI; MITA ARIO; MATSUDA OSAMU |
发表日期 | 1986-05-14 |
专利号 | JP1986095591A |
著作权人 | SONY CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To simply inspect and measure whether an FFP has a symmetry or not even at the stage that it is not yet mounted on a heat sink or a header by forming a plurality of photodetectors for receiving the laser light from a semiconductor laser on the surface of a semiconductor substrate, thereby accurately positioning and bonding the chip to the substrate. CONSTITUTION:Three PIN photodiodes PDl, PDc, PDr are disposed in parallel with a center line 6 of a semiconductor substrate 1 on the surface of a monitor region 7 of the substrate A probe 9l is contacted with the surface of the photodiode PDl of the left side as seen from a semiconductor laser chip 2 side, a probe 9l is contacted with the surface of the photodiode PDr of the right side, reverse bias voltage of the same value is applied individually to the photodiodes PDl and PDr to detect the photocurrents flowed to the photodiodes PDl and PDr at that time, thereby comparing the photocurrents. If there is no difference exceeding the allowable preset range between the photocurrents, the laser is judged as having symmetry in the FFP. |
公开日期 | 1986-05-14 |
申请日期 | 1984-10-16 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70593] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORP |
推荐引用方式 GB/T 7714 | AYABE MASAAKI,MITA ARIO,MATSUDA OSAMU. Semiconductor laser. JP1986095591A. 1986-05-14. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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