Bipolar transistor
文献类型：专利
| 作者 | ARAI MICHIHIKO |
| 发表日期 | 1986-06-19 |
| 专利号 | JP1986131490A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Bipolar transistor |
| 英文摘要 | PURPOSE:To much effectively perform a light coupling by forming a structure that the energy gap of a collector layer is reduced smaller than that of a base layer by altering the compositions of the collector and base layers. CONSTITUTION:The composition of a crystal is set to become the relationship of Eg4>=Eg3>Eg2 in the relationship between the energy gaps Eg2 and Eg4 among a collector layer 2, a base layer 3 and an emitter layer 4. In case of Eg4>=Eg3, the improvements in the current injection efficiency by wide gap emitter and light input/output efficiency of upper emitter layer 4 side are performed. Since Eg3>Eg2 is satisfied, the high sensitivity photoreceiving wave length band of a transistor is substantially lambda4(=K/Eg4) |
| 公开日期 | 1986-06-19 |
| 申请日期 | 1984-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ARAI MICHIHIKO. Bipolar transistor. JP1986131490A. 1986-06-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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