Semiconductor laser diode device
文献类型：专利
| 作者 | OOTA YUTAKA; SAITO YOSHITO; YOSHIMURA KAZUNORI |
| 发表日期 | 1986-08-06 |
| 专利号 | JP1986174790A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser diode, by using a conducting Si substrate, in which P- or N-type impurities are diffused, as a heat sink material. CONSTITUTION:P- or N-type impurities are added in an Si substrate 4, and a conducting Si heat sink 4a having resistivity of 0.05-0.015OMEGAcm is formed. Four-layer electrodes comprising Al, Ti, Pt and Au are attached to the upper and lower surfaces. The heat sink is bonded to a center 3 of a die mounting part 2. A semiconductor laser die 5 is bonded to the heat sink 4a. Then a lead 8 and the electrode of the die 5 are connected by a thin metal wire 7. In this constitution, a connecting line between the upper and lower surfaces of the heat sink is not required. Monitoring light is not shielded by the aggregation of solder in the vicinity of the wiring. Deterioration of modulation at the time of high speed modulation due to capacity action of the high resistance Si heat sink can be prevented. |
| 公开日期 | 1986-08-06 |
| 申请日期 | 1985-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70621]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OOTA YUTAKA,SAITO YOSHITO,YOSHIMURA KAZUNORI. Semiconductor laser diode device. JP1986174790A. 1986-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。