Semiconductor laser device
文献类型：专利
| 作者 | KOJIMA KEISUKE; HISAMA KAZUO; ARANISHI TOSHIO |
| 发表日期 | 1986-09-12 |
| 专利号 | JP1986206285A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To modulate beams having a plurality of wavelengths by separate currents while coupling all beams to one optical fiber by the same lens by connecting discrete electrode to each of active layers having a plurality of compositions interposed between confinement layers in a wavelength multiple distributed feedback semiconductor laser. CONSTITUTION:When the periods of diffraction gratings 2a-2c are made mutually to differ, electrons injected from electrodes 5a-5c recombine with holes injected from an electrode 5d near the interfaces in Zn diffusion regions 4 of active layers 1a-1c and beams are generated, but the wavelengths of these beams mutually differ, and several oscillating wavelength is stabilized. When the band gaps of the confinement layers 3a-3c are increased previously, the active layers 1a-1c are separated electrically, thus modulating beams by respective current, then extracting beams having each wavelength. A plurality of the active layers are laminated in the vertical direction and several light- emitting section is formed to a vertical type, the intervals of the beam spots of outgoing beams are reduced, and beams are collimated by the same lens and can be projected to the same optical fiber, thus lowering the cost of the system, then miniaturizing the system. |
| 公开日期 | 1986-09-12 |
| 申请日期 | 1985-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,HISAMA KAZUO,ARANISHI TOSHIO. Semiconductor laser device. JP1986206285A. 1986-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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