Semiconductor light emitting device
文献类型：专利
| 作者 | KIMURA SOICHI; UEDA YOSHIE |
| 发表日期 | 1986-10-16 |
| 专利号 | JP1986231790A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To eliminate a crystal defect created in a wire bonding process by a method wherein a solder layer is provided on the one side electrode of a semiconductor light emitting element and the solder layer is melted by heating and a bonding wire is inserted into the melted solder for connection. CONSTITUTION:Die-bonding is carried out by a method wherein an Si submount 1 is heated to melt Pb/Sn solder 2 and a laser chip 7 is stuck to the solder 2 in this condition and then the submount is cooled. As the Pb/Sn solder region 5 is formed smaller than the area of the laser chip 7, the melted solder has no chance to drip onto the side or the end surfaces of the laser chip. After the die-bonding described above, the submount 1 is heated again to the melting point of the Pb/Sn solder 5 to melt the Pb/Sn solder 5. As the solder 2 is not melted at that time, the position of the laser chip 7 is never unstable. Then an Au wire 6 is inserted into the melted solder 5 and the submount 1 is cooled in this condition to connect the Au wire 6 to the laser chip 7. |
| 公开日期 | 1986-10-16 |
| 申请日期 | 1985-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70636]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,UEDA YOSHIE. Semiconductor light emitting device. JP1986231790A. 1986-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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