Semiconductor laser device
文献类型：专利
| 作者 | NEGISHI HIDEHIKO; MATSUKI MICHIO |
| 发表日期 | 1986-12-11 |
| 专利号 | JP1986281578A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To fix a semiconductor laser element and a heat sink and a ribbon material for an electrode simultaneously by maintaining the electrical conduction of the semiconductor laser element through metallic fixation by the ribbon material without using wire bonding. CONSTITUTION:With an electrode for operating a semiconductor laser element 3, one end is lead out of a stem 1 through a heat sink 2, and the other end is lead out of a strut 7 for leading out the electrode through an electrode ribbon 6 from the upper surface of the semiconductor layer element 3. The electrode ribbon 6 takes a curved shape, one end thereof is fixed to the strut 7 for leading out the electrode by a metal, and solder is metallized to the other end thereof. The semiconductor laser element 3 is fastened to the heat sink 2 by a metal, and the electrode ribbon 7 having resiliency is pushed down and fixed so as to be brought into contact with the semiconductor laser element 3. Accordingly, the semiconductor laser element and the ribbon for the electrode can be fastened by solder, thus manufacturing a semiconductor laser device having extremely high productivity and high reliability. |
| 公开日期 | 1986-12-11 |
| 申请日期 | 1985-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70643]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NEGISHI HIDEHIKO,MATSUKI MICHIO. Semiconductor laser device. JP1986281578A. 1986-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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