Semiconductor light-emitting device
文献类型：专利
| 作者 | IMAI HAJIME |
| 发表日期 | 1986-12-23 |
| 专利号 | JP1986292389A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor light-emitting device with which monitoring is accurately performed with forward directional output, by utilizing the surface reflection light of the coupling system. CONSTITUTION:A laser element 1, a light-receiving element 2, and a first lens 3 is contained in the closely sealed container 6 of this semiconductor light- emitting device. The one end surface of the laser element 1 is a fully reflective plane, and the position of the resonator on the other end plane of the light- emitting side is arranged on the light-axis of the first lens 3. The surface reflection light of the partial light that is emitted from the laser element 1 and reaches the light-incident plane of the first lens 3 is focused on the light- receiving element 2 to monitor the output of the light-emitting element. The reflection light still has a wide area on the end plane position of the light- emitting side of the laser element 1 without producing a coupling failure. With this method, accurate monitoring operation is actualized with minimum element number by using the forward direction output of the light-emitting element, thereby improving the stability of the light-application system. |
| 公开日期 | 1986-12-23 |
| 申请日期 | 1985-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IMAI HAJIME. Semiconductor light-emitting device. JP1986292389A. 1986-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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