Semiconductor device
文献类型：专利
| 作者 | SATOU NAOSHI; HIRAO MOTONAO; KOBAYASHI MASAYOSHI; MORI TAKAO |
| 发表日期 | 1986-03-04 |
| 专利号 | JP1986044492A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To enhance the reliability of the titled device by preventing the reaction of both of the followings by providing an Mo or W barrier between a III-V group compound semiconductor crystal of GaAlAs, InGaAsP series or the like and a solder of Au or Au-Sn, In-Sn, or Pb-Sn series. CONSTITUTION:A P type InP 5 and P type InGaAsP 6 are laminated on an InGaAsP active layer 3 filled with a P type InP 2 on an N-InP substrate 1, and an electrode window is provided in an SiO2film 7. Next, Cr of about 150-500Angstrom , Mo or W of about 1,000-2,000Angstrom , and Au of 1,000-10,000Angstrom are laminated by successive evaporation. Loading to a heat radiator produces the electrode structure of ohmic electrode and adhesion layer-barrier metallic laser-Au or solder layer. Even under high temperature and high output, the reaction of the solder and the laser constituent or the rise in operating current due to the diffusion of solder into the laser element never occurs. |
| 公开日期 | 1986-03-04 |
| 申请日期 | 1985-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SATOU NAOSHI,HIRAO MOTONAO,KOBAYASHI MASAYOSHI,et al. Semiconductor device. JP1986044492A. 1986-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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