Laser diode array
文献类型：专利
| 作者 | NISHI SHIGETO; YAMABAYASHI YOSHIAKI |
| 发表日期 | 1987-04-27 |
| 专利号 | JP1987092384A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode array |
| 英文摘要 | PURPOSE:To decrease the positions of optical coupling, and to change over wavelengths by forming a plurality of distributed type laser diodes having a dimensional structure in which the state of phase synchronism is brought when light is emitted at the same time as an end-surface resonator type laser diode formed onto the same substrate. CONSTITUTION:An end-surface resonator type laser diode B capable of being oscillated even at either of wavelengths lambdaa and lambdac, a laser diode A, which takes a distributed feedback type and a grating space of which is set so that oscillation wavelengths are brought to lambdaa, and a laser diode C, which takes the distributed feedback type and a grating space of which is t so that oscilla tion wavelengths are brought to lambdac are formed onto the same substrate. When an input electric signal is introduced to an electrode 16 for the diode B while the diode A is made to emitt light, the diodes A, B are brought to the state of phase synchronism, and the diode B emits light at the wavelength lambdaa. When the diode C is made to emitt light, the diode B emits light at the wavelength lambdac. |
| 公开日期 | 1987-04-27 |
| 申请日期 | 1985-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NISHI SHIGETO,YAMABAYASHI YOSHIAKI. Laser diode array. JP1987092384A. 1987-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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