Semiconductor laser
文献类型：专利
| 作者 | MOTOHORI ISAO; CHIBA MICHIRO; KAMEI MASABUMI; ODA TATSUJI |
| 发表日期 | 1987-05-14 |
| 专利号 | JP1987104093A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent an interference from occurring due to a returning light by forming the active layer of an end face protecting film in thickness for reducing the absorption of a laser beam, and forming it in thickness to satisfy the non-reflection condition of the part covered on returning light incident unit. CONSTITUTION:A semiconductor chip 11 for forming a semiconductor laser 10 is chip-bonded to a heat sink 15 by a p-type side electrode 14 formed on the surface. The thicknesses of end face protecting films 16, 16 made of SiN formed on the light emitting end face 10a and the opposite side end face ae reduced from the front surface side toward the back surface side. The thickness Ta of the portion to cover an active layer 12 is the value for satisfying the condition that the absorption is least, and the thickness Tb of the portion for covering the returning light incident portion 17 is set to the value for satisfying the non-reflecting condition, and the thickness Tb is approx. 1/2 of the thickness Ta. Accordingly, the reflection at the end face 10a can be prevented to eliminate the error in the detection of a tracking error. |
| 公开日期 | 1987-05-14 |
| 申请日期 | 1985-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70661]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | MOTOHORI ISAO,CHIBA MICHIRO,KAMEI MASABUMI,et al. Semiconductor laser. JP1987104093A. 1987-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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