Semiconductor laser device
文献类型：专利
| 作者 | TAMURA MITSUO |
| 发表日期 | 1987-05-29 |
| 专利号 | JP1987118592A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a power source having an isolator, which can improve coupling efficiency with optical filters, decrease the number of parts and can make the configuration compact, by sealing a semiconductor laser element with a sealing cap provided with an optical window, which is inclined at a Brewster angle so that only light that is aligned with the polarizing direction of laser light is transmitted. CONSTITUTION:A semiconductor laser element is sealed with a sealing cap provided with an optical window. The window is inclines at a Brewster angle so that light, which is aligned with the polarizing direction of laser light from the semiconductor laser element, is transmitted. For example, in a light source having an optical isolator using such a semiconductor laser 8, the laser light emitted from the semiconductor laser device 8 is inputted in a Farady rotor 3. The polarizing direction is rotated by 45 deg. The light passes through an analyzer 4 and a lens 6 and is inputted in optical fiber 7. Of the laser light rays reflected by the incident end surface of the optical fiber 7, only the light rays, which are aligned with the polarizing direction of the analyzer 4, pass the analyzer 4 and are reversely inputted to the Farady rotor 3 again. The polarizing direction is rotated by 45 deg. The light is returned toward the semiconductor laser device 8 so that the polarizing direction crosses the emitted laser light at a right angle. But the light is reflected by the optical window and is not returned into the semiconductor laser. |
| 公开日期 | 1987-05-29 |
| 申请日期 | 1985-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAMURA MITSUO. Semiconductor laser device. JP1987118592A. 1987-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。