Optical semiconductor module
文献类型：专利
| 作者 | SASAKI SHINYA; NAKANO HIROYUKI; TANAKA KATSUKI; MAEDA MINORU; ADACHI EIICHI; YOSHIYA TSUTOMU |
| 发表日期 | 1987-06-06 |
| 专利号 | JP1987124780A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor module |
| 英文摘要 | PURPOSE:To inhibit a parasitic reactance component extremely, and to enable the operation of a GHZ zone by fixing an optical semiconductor element to one surface of an insulating substrate and forming an electrode lead to the other surface of the insulating substrate. CONSTITUTION:Positive and negative electrodes for an optical semiconductor element are connected to electrical patterns 12, 12' on an insulating substrate 15, to which metallizing is executed, through bonding wires 9, 9', but the insulating substrate 15 is connected electrically to each electrode lead 3, 3' through through-holes 13, 13'. The electrode leads 3, 3' may have length required for soldering to the substrate, thus reducing parasitic inductance. Since the through- holes 13, 13' are used, parasitic inductance in a package is also reduced, thus enabling high-frequency operation. |
| 公开日期 | 1987-06-06 |
| 申请日期 | 1985-11-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70668]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SASAKI SHINYA,NAKANO HIROYUKI,TANAKA KATSUKI,et al. Optical semiconductor module. JP1987124780A. 1987-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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