Semiconductor laser device
文献类型：专利
| 作者 | WATANABE SEIICHI; YONEYAMA OSAMU; UMEZAWA ISAO |
| 发表日期 | 1987-07-28 |
| 专利号 | JP1987171178A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser device with a photodiode for monitor operating even when a power supply having both polarity is not used by working the photodiode and a semiconductor laser diode by a single power supply. CONSTITUTION:Laser beams emitted from a laser-beam outgoing end surface 9 for an active layer 7 are received by a photodiode 3 and monitored. laser beams emitted from a laser-beam outgoing end surface 10 are projected outside a semiconductor laser device as original laser beams. Since the semiconductor laser device electrically isolates a section, with which a laser diode 5 is bonded, by a P-type semiconductor region 4, there is no relationship of electrical connection between the photodiode 3 and the laser diode 5. Accordingly, the photodiode 3 and the laser diode 5 can each be connected to a power supply separately, and even a positive power supply and even a negative power supply can also be used without hindrance. |
| 公开日期 | 1987-07-28 |
| 申请日期 | 1986-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | WATANABE SEIICHI,YONEYAMA OSAMU,UMEZAWA ISAO. Semiconductor laser device. JP1987171178A. 1987-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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