Semiconductor laser device
文献类型：专利
| 作者 | NAKAJIMA MASATO |
| 发表日期 | 1987-08-17 |
| 专利号 | JP1987188293A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To form a semiconductor laser device which has a light detector for a monitor capable of obtaining a large output current, can separate an emitted light and a reflected light and also, can be easily manufactured by a method wherein a trapezoidal chip carrier, whereon the light detector for a monitor is fixed, is fixed on the surface of the same stem base as a stem base whereon a heat sink, whereon a semiconductor laser chip is fixed, is fixed. CONSTITUTION:A heat sink 2, whereon a semiconductor laser chip 1 is fixed, consisting of silicons and so on is fixed on one surface of a stem base 3 with such a brazing metal as a Pb-Sn eutectic solder, while a light detector 4 for a monitor is fixed on the slant face of a chip carrier 5 formed in a trapezoidal form with such a brazing metal as an Au-Sn eutectic solder and the light detecting surface is opposed to one end surface of the semiconductor laser chip. Moreover, the chip carrier 5 is fixed on the same surface as the surface of the stem base 3, whereon the heat sink 2 is fixed, with a Pb-Sn eutectic solder and so on. As the mounting position of the light detector 4 for a monitor can be most approached the semiconductor laser chip 1 regardless of the form of the stem base 3, even the light-receiving element having the small light detecting surface can obtain a large monitoring output current. |
| 公开日期 | 1987-08-17 |
| 申请日期 | 1986-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NAKAJIMA MASATO. Semiconductor laser device. JP1987188293A. 1987-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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