Semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1987-08-21 |
| 专利号 | JP1987190887A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an irregularity in incident light intensity to a photodetector disposed at the rear of a light emitting element according to the position of the photodetector by disposing the distance of a light emitting position at the end of a semiconductor laser and the outermost layer surface of the electrode nearest to the emitting position to 10mum or shorter. CONSTITUTION:A distance from an active layer 10 to a boundary 13 between crystal electrodes is increased at an electrode outermost layer 11 of the side fusion-bonded to the same heat sink 2, and a distance from a light emitting unit position 101 to the surface 21 of the heat sink 1 is 10mum or longer. The formation of a thick electrode layer by a normal depositing method is not so practical, and a thick gold layer of 3mum or larger is adapted by the plating. In case of h=10mum, the width of the irregularity in the incident light quantity to the photodetector having 200mum of photodetecting diameter is approx. 3:1 in calculation, and in case of h=15mum, it becomes approx. 1:1 in calculation. Even if the increase in the irregularity due o the displacement from the approximate value occurring in the actual case is considered, the irregularity in the incident light quantity is largely improved as compared with the case of h 5mum. |
| 公开日期 | 1987-08-21 |
| 申请日期 | 1986-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Semiconductor laser. JP1987190887A. 1987-08-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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