Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; UOMI KAZUHISA; NAKATSUKA SHINICHI; YOSHIZAWA MISUZU; ONO YUICHI; YAMASHITA SHIGEO; KONO TOSHIHIRO |
| 发表日期 | 1987-11-09 |
| 专利号 | JP1987256488A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having only a little optical noise, and especially suitable for a light source for an optical disk file by a method wherein two semiconductor lasers enabled independent modulation mutually as light sources, and having large different edge surface reflectivities are arranged in parallel adjoining mutually. CONSTITUTION:A low reflectivity film 4 consisting of an SiO2 film of thickness of 1/3.5 wavelength is formed on the front edge surface of a first semiconductor laser 1 (A), and a two-layer high reflectivity film 5 consisting of respective on layer of an SiO2 film and an a-Si film of thickness of 1/4 wavelength is formed on the rear edge surface. While, at the case of a second laser 2 (B), in opposition to the case of the laser A, a high reflectivity film is formed on the front edge surface, and a low reflectivity film is formed on the rear edge surface. The chip interval of the laser A and the laser B is made to be about 50mum, the laser stripes are arranged as to be in parallel, P-N junctions are put on the upper parts, and bonded on a laser mount 3. Widths of the laser chips are about 300mum, the interval between the laser A and the laser B is made to be about 350mum, and the laser A and the laser B are provided with wire bonding, and can be driven independently. |
| 公开日期 | 1987-11-09 |
| 申请日期 | 1986-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70700]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,UOMI KAZUHISA,NAKATSUKA SHINICHI,et al. Semiconductor laser device. JP1987256488A. 1987-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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