Semiconductor light emitting device
文献类型：专利
| 作者 | YAMAGOSHI SHIGENOBU |
| 发表日期 | 1987-11-26 |
| 专利号 | JP1987272578A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To solve a problem of increasing the number of steps of assembling a semiconductor light emitting device and a problem of forming an end face by etching by providing an optical guide coupled optically with a laser diode, and forming a photodetector at least on part of the guide to monitor a laser light. CONSTITUTION:A first optical guide 2 for forming a resonator of a laser diode and a second optical guide 3 optically coupled with the guide 2 and having an electrically separating part 8 from a laser diode side are provided, and a photodetector is formed at the side 3' separated by the part 8 of the guide 3. For example, a double hetero structure is formed on a wafer 1 to form the guide 2 for forming a laser resonator and the photodetecting guide 3 optically coupled relatively weakly with the guide 2. Then, part of the guide 3 is etched until it penetrates an active layer 5 to form an electric isolator 8. A P-type electrode 9 is formed at the separated side 3, of the guide 3, an N-type electrode is formed at the side of an n type GaAs substrate 11, and laser ends ELD, ELD' are formed by cleaving. |
| 公开日期 | 1987-11-26 |
| 申请日期 | 1986-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70702]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGOSHI SHIGENOBU. Semiconductor light emitting device. JP1987272578A. 1987-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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