Semiconductor laser diode device
文献类型：专利
| 作者 | MATOBA AKIHIRO; HORIKAWA HIDEAKI; OSHIBA SAEKO; WADA HIROSHI |
| 发表日期 | 1987-11-27 |
| 专利号 | JP1987273790A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode device |
| 英文摘要 | PURPOSE:To form a driving element as a unitary body by using a conventional laser diode wafer, by a constitution, wherein current narrowing is performed in its p-n-p-n structure in a laser diode part, the laser diode part and a thyristor part are electrically isolated, and optical coupling is possible. CONSTITUTION:An n-InP layer 5 is grown on a flat p-type InP substrate 4. A V groove is formed in the grown wafer. Double heterojunction structures 6-8 comprising InP/InGaAsP are formed so as to bury said groove. The energy gap of the active layer 7 is smaller than those of the upper and lower InP layers 6 and 8. Optical absorption is selectively yielded only in the InGaAsP for the light in the wavelength region from the vicinity of the energy gap of the InGaAsP to the energy gap of InP on the side of a short wavelength. A signal can be inputted by the input of the light on the side of the p-type InGaAsP 7 in a thyristor B. Thus, by using an ordinary laser diode wafer, a modulating element, which can be modulated by an electric signal and an optical signal input, can be formed as a unitary body. |
| 公开日期 | 1987-11-27 |
| 申请日期 | 1986-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MATOBA AKIHIRO,HORIKAWA HIDEAKI,OSHIBA SAEKO,et al. Semiconductor laser diode device. JP1987273790A. 1987-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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