Semiconductor laser
文献类型：专利
| 作者 | ASAHI HAJIME; TANAKA HIDENAO; KAWAMURA YUICHI; WAKITA KOICHI; NOJIMA SHUNJI |
| 发表日期 | 1987-11-28 |
| 专利号 | JP1987274682A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To add the heat dissipating efficiency for stabilizing the laser oscillation by a method wherein an insulating layer comprises ZnSe while an electrode on a semiconductor laminated body is extended over the ZnSe insulating layer. CONSTITUTION:A mesa part 7 is encircled by an insulating layer 20 comprising ZnSe while an electrode 2 on a semiconductor laminated body 2 is extended over the ZnSe insulating layer 20 with high thermal conductivity. A semiconductor laser is arranged on a thermosink to be brought into contact with the electrode 8 on the semiconductor laminated body so that the heat generated in the region of an active layer 4 below the mesa part 7 may be conducted to the electrode 8 on the semiconductor laminated body 2 to be dissipated effectively outside. Thus, the laser oscillation can be stabilized. |
| 公开日期 | 1987-11-28 |
| 申请日期 | 1986-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70705]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | ASAHI HAJIME,TANAKA HIDENAO,KAWAMURA YUICHI,et al. Semiconductor laser. JP1987274682A. 1987-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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