Semiconductor light-emitting device
文献类型：专利
| 作者 | KUWAE YOSHINORI; KAMATA MASATO; ISHIZUKA MASARU; CHINEN YUKIO; KIMURA SAKAE |
| 发表日期 | 1988-01-25 |
| 专利号 | JP1988017585A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To form a low-cost light-emitting device, which has a superior heat dissipation characteristic, by forming a heat conductive film on the side of the junction surface of a heat sink substrate with at least one of a semiconductor light-emitting element or a stem. CONSTITUTION:In a semiconductor light-emitting device of a constitution, wherein a heat sink 12 is bonded on a stem 11 and a semiconductor light-emitting element 15 is bonded on the heat sink, the heat sink 12 shall be one of a structure, wherein a heat conductive film 14 is formed on the side of the junction surface of a heat sink substrate 13 with at least one of the semiconductor light- emitting element or the stem, and moreover, the area ratio in the mutual junction surfaces of the heat sink and the semiconductor light-emitting element shall be 8: 1 or more. Accordingly, a material less expensive than a high pressure diamond can be used for the heat sink substrate, the one having a large area can be used in consideration of just a fact that the heat conductivity is good and moreover, the heat conductive film on the surface can be also formed at low cost. Thereby, the heat generated in the semiconductor light-emitting element can be quickly removed through the heat sink having a wide area and the heat dissipation characteristic can be significantly improved. |
| 公开日期 | 1988-01-25 |
| 申请日期 | 1986-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70714]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KUWAE YOSHINORI,KAMATA MASATO,ISHIZUKA MASARU,et al. Semiconductor light-emitting device. JP1988017585A. 1988-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。