Semiconductor laser
文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1988-03-16 |
| 专利号 | JP1988060589A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To narrow the line width of outgoing beam spectra by forming a second laser element optically coupling with a laser element projecting beams by side sections mutually and having a resonator of high Q near the laser element projecting beams. CONSTITUTION:Since a second laser element B mounted near a first laser element A need not project beams, end-surface reflection confining beams by high reflecting films 8a, 8b is increased and Q of a resonator is improved, and the line width of oscillation spectra is narrowed. The second laser element B is optically coupled with the first laser element A. Consequently, the oscillation spectra of the first laser element A are restrained by the oscillation spectra of the second laser element B by an active-mode-locking phenomenon with optical coupling, and line width is narrowed. Accordingly, a semiconductor laser can correspond to operation such as the increase of the capacity of optical communication. |
| 公开日期 | 1988-03-16 |
| 申请日期 | 1986-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70721]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. Semiconductor laser. JP1988060589A. 1988-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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