中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser devices

文献类型:专利

作者SAKANO, SHINJI HITACHI DAI-4-KYOSHINRYO; MATSUMURA, HIROYOSHI
发表日期1988-04-06
专利号EP0213965A3
著作权人HITACHI, LTD.
国家欧洲专利局
文献子类发明申请
其他题名Semiconductor laser devices
英文摘要It is possible to narrow the emission spectrum linewidth of a semiconductor laser device by coupling optically an external resonator (2) with one end surface of the semiconductor laser (l). However, the structure of the external resonator (2) should match the phase of the light emitted by the laser (l). Heretofore, this matching has been effected by adjusting the length of the external resonator (2), and hence productivity and reproducibility have not been good. According to this invention, characteristics of the external resonator (2) can be adjusted electrically to be matched with the phase of the emitted light owing to the fact that the external resonator (2) is made of a material, whose refractive index can be varied electrically. Therefore the semiconductor laser device according to this invention is very practical.
公开日期1988-04-06
申请日期1986-09-04
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70722]  
专题半导体激光器专利数据库
作者单位HITACHI, LTD.
推荐引用方式
GB/T 7714
SAKANO, SHINJI HITACHI DAI-4-KYOSHINRYO,MATSUMURA, HIROYOSHI. Semiconductor laser devices. EP0213965A3. 1988-04-06.

入库方式: OAI收割

来源:西安光学精密机械研究所

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