Semiconductor laser devices
文献类型:专利
作者 | SAKANO, SHINJI HITACHI DAI-4-KYOSHINRYO; MATSUMURA, HIROYOSHI |
发表日期 | 1988-04-06 |
专利号 | EP0213965A3 |
著作权人 | HITACHI, LTD. |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser devices |
英文摘要 | It is possible to narrow the emission spectrum linewidth of a semiconductor laser device by coupling optically an external resonator (2) with one end surface of the semiconductor laser (l). However, the structure of the external resonator (2) should match the phase of the light emitted by the laser (l). Heretofore, this matching has been effected by adjusting the length of the external resonator (2), and hence productivity and reproducibility have not been good. According to this invention, characteristics of the external resonator (2) can be adjusted electrically to be matched with the phase of the emitted light owing to the fact that the external resonator (2) is made of a material, whose refractive index can be varied electrically. Therefore the semiconductor laser device according to this invention is very practical. |
公开日期 | 1988-04-06 |
申请日期 | 1986-09-04 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70722] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI, LTD. |
推荐引用方式 GB/T 7714 | SAKANO, SHINJI HITACHI DAI-4-KYOSHINRYO,MATSUMURA, HIROYOSHI. Semiconductor laser devices. EP0213965A3. 1988-04-06. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。