Semiconductor laser device
文献类型：专利
| 作者 | IBE HIROYUKI |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169783A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize the temperature of a laser chip in a semiconductor laser device of the structure in which a semiconductor laser is mounted by forming a temperature sensor on one main surface of a submount to directly detect the temperature of the chip. CONSTITUTION:A semiconductor laser 11 is formed with metal films 15, 16, mounted on a submount 12, and the submount 12 is further mounted on a heat sink 13. The submount 12 has an electric circuit 16 including an Si substrate, an Si bipolar transistor formed on the substrate, a driven element, and an SiO2 insulating film 14. The electric circuit formed on the substrate is considered, for example, to be a circuit using the Si bipolar transistor shown in the drawing. When a predetermined voltage is applied, a flowing current varies as the temperature changes. Accordingly, the temperature of the lower surface of a semiconductor laser chip on the submount can be detected. |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70747]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | IBE HIROYUKI. Semiconductor laser device. JP1988169783A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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