Semiconductor laser array device
文献类型:专利
作者 | ITO MASATAKA; KAWANO HIDEO |
发表日期 | 1988-07-23 |
专利号 | JP1988179593A |
著作权人 | NEC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser array device |
英文摘要 | PURPOSE:To stably drive independently by reducing the thickness of a semiconductor substrate near an arraylike light source light emitting unit smaller than that of its periphery, and filling a gap between the substrate of the thin section and a heat sink with a medium having large thermal conductivity. CONSTITUTION:The title device is composed of an arraylike light source 20 in which a plurality of semiconductor lasers (LD) are integrated on the first front surface of one semiconductor substrate 21, and a heat sink 25 in which an upper metal 26 is closely contacted with a common electrode 24 formed on a second surface opposed to a first surface of the substrate 21 while being the surface of the substrate 2 The thickness of the substrate 21 in the vicinity of the light emitting units 28, 29 of the source 20 is smaller than that of the periphery, and a gap between the substrate 21 of the thin section and the sink 25 is filled with a medium having large thermal conductivity. Thus, the heats generated at the units 28, 29 escape through the sink 25, while the thermal interference to the adjacent LD is extremely small to be stably driven independently. |
公开日期 | 1988-07-23 |
申请日期 | 1987-01-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70748] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | ITO MASATAKA,KAWANO HIDEO. Semiconductor laser array device. JP1988179593A. 1988-07-23. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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