Semiconductor laser array device
文献类型：专利
| 作者 | ITO MASATAKA; KAWANO HIDEO |
| 发表日期 | 1988-08-17 |
| 专利号 | JP1988199479A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser array device capable of stable independent operations, by making a thickness of a semiconductor substrate in the vicinity of luminous parts of an arrayed light source smaller than that on the peripheral part and shaping an upper metallic part of a heat sink in conformity with said semiconduc tor substrate. CONSTITUTION:A semiconductor laser array device 21 is composed of the following units: an arrayed light source which is formed of a plurality of semiconductor laser devices integrated on a similar semiconductor substrate, and a heat sink 25 whose upper metallic part 26 is closely stuck on a common electrode 24 which is formed on the surface of the semiconductor substrate in said arrayed light source. Thereupon, a thickness of the semiconductor substrate in the vicinity of luminous parts 28 and 29 in said arrayed light source is made smaller than that on the peripheral part, and the upper metallic parts 26 of the heat sink 25 are shaped in conformity with said semiconductor substrate. Accordingly, heat generated in the luminous parts is made to escape through the heat sink part adjacent to the luminous parts, and so an obtained heat-radiating effect approximates to the effect in a (p) side down mounting method where electrodes in the vicinity of the luminous parts come in contact with the heat sink, and thermal interference in an adjacent LD becomes small enough to realize stable independent operations. |
| 公开日期 | 1988-08-17 |
| 申请日期 | 1987-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70752]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ITO MASATAKA,KAWANO HIDEO. Semiconductor laser array device. JP1988199479A. 1988-08-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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