Submount
文献类型：专利
| 作者 | IKEGAMI YOSHIKAZU |
| 发表日期 | 1988-09-13 |
| 专利号 | JP1988220583A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount |
| 英文摘要 | PURPOSE:To obtain the excellent heat conduction, insulation and heat radiation by forming one set of reversed P-N junctions inside a heat-radiating body. CONSTITUTION:At a submount 3, impurities whose conductivity type is opposite to that of a substrate of a semiconductor element 5 are introduced down to a depth of several mu from a face where a heat-radiating body 6 composed of, e.g., silicon is glued and another face where a heat sink is glued; one set of a first and a second P-N junctions 7a, 7b whose diode characteristics are mutually reversed are formed. In order to enhance the bonding performance of the semiconductor element 5 and the heat sink 1, metal layers 8 composed of gold or the like are formed on the face where the element is glued and on the face where the heat sink is glued. Accordingly, a reverse-direction breakdown voltage of a diode formed by the junctions 7a, 7b can be set to a prescribed value if the specific resistance of the heat-radiating body 6 and the concentration of diffusion impurities to form the junctions are controlled. By this setup, the sufficient insulation is displayed against a voltage which is impressed on both ends of the submount 3 during an ordinary operation of the semiconductor element 5. |
| 公开日期 | 1988-09-13 |
| 申请日期 | 1987-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70756]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IKEGAMI YOSHIKAZU. Submount. JP1988220583A. 1988-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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