半導体レーザ装置
文献类型：专利
| 作者 | 松本 晃広; 種谷 元隆; 松井 完益; 森本 泰司; 兼岩 進治; 山口 雅広 |
| 发表日期 | 1997-08-29 |
| 专利号 | JP2688897B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To prevent an end face of emitting laser light of a semiconductor crystal from deteriorating due to a temperature rise and to improve the reliability by covering the end face with a heat sink layer made of a material having better thermal conductivity than that of the crystal. CONSTITUTION:A heat sink layer made of a material having better thermal conductivity than that of a semiconductor crystal is formed on the output end face of a laser light of the crystal. That is, a dielectric protective film 10 made of Al2O3 is formed on the laser light emitting end face of the crystal 3 made of layers 30, 31, 33-36, and an aluminum metal film 12 which becomes a heat sink layer is formed on a region except the light emitting section 11 on a dielectric protective film 10. The thermal conductivity of the film 12 is considerably better than that of a GaAs crystal and the film 10. Thus, even if heat is generated near the end face of the crystal 3 at the time of operating at high output, the temperature rise at near the end face is suppressed by the layer 12 formed on the end face, thereby preventing the end face of the crystal from deteriorating. |
| 公开日期 | 1997-12-10 |
| 申请日期 | 1987-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 松本 晃広,種谷 元隆,松井 完益,等. 半導体レーザ装置. JP2688897B2. 1997-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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