Semiconductor light emitting device
文献类型：专利
| 作者 | NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI; HARA TOSHITAMI |
| 发表日期 | 1988-09-29 |
| 专利号 | JP1988233586A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To expand the selecting width of materials for heat dissipation bodies, by using lead-antimony-tin based soft alloy as a bonding layer for a semiconductor light emitting device, which is coupled with a heat dissipation body through the bonding layer. CONSTITUTION:On the upper surface of a heat dissipation body 1 formed with copper having good heat conductivity, a soft alloy 2 having the compositions of 85% lead, 15% antimony and 3.5% tin is deposited to a thickness of 2-3mum by an evaporating method or a plating method. An ohmic metal layer 5 is evaporated on the surface of a laser diode 3, which is closer to an active layer 4 as a heating part. A bonding metal layer 6 is evaporated on the opposite surface. The laser diode 3 is closely contacted with the heat dissipation body 1, with the active layer side at the lower side. Under this state, the heat dissipation body 1 is heated to 239 degrees in a nitrogen atmosphere. Then the soft alloy layer 2 is fused and attached to the ohmic metal layer 5. Thus thermal, electric bonding is performed. |
| 公开日期 | 1988-09-29 |
| 申请日期 | 1987-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70763]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | NOJIRI HIDEAKI,SEKIGUCHI YOSHINOBU,HASEGAWA MITSUTOSHI,et al. Semiconductor light emitting device. JP1988233586A. 1988-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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