Submount for optical semiconductor element
文献类型：专利
| 作者 | HORIUCHI SHIGEKI |
| 发表日期 | 1988-09-29 |
| 专利号 | JP1988233591A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount for optical semiconductor element |
| 英文摘要 | PURPOSE:To smooth solder layers after die bonding, by providing barrier layers having a three-layer structure of a Ti layer, an Ni layer and an Ag layer on both surfaces of a submounting substrate comprising a conductive material, and continuously forming the solder layers thereon by resistance heating. CONSTITUTION:Barrier layers 3 comprising a Ti layer 31, an Ni layer 32 and an Ag layer 33 are provided on both surfaces of a submounting substrate 2 comprising an electrically conductive material. Sn solder layers 4 are continuously evaporated by resistance heating. At this time, the layer 33 having a sufficient thickness is provided by continuous evaporation beneath each layer 4. Therefore, conformity of the solder to the ground material when the solder is fused is excellent. The smoothness of the surface of the solder layer after die bonding is improved in comparison with the case, in which the layer 33 is not present. Therefore, the occurrence of the defective characteristics of a monitoring current, which is caused by an eclipse a laser beam emitted from a light emitting point in the vicinity of the solder surface due to the swelling of the surface of the solder layer, is decreased in a junction-down assembling method. |
| 公开日期 | 1988-09-29 |
| 申请日期 | 1987-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI. Submount for optical semiconductor element. JP1988233591A. 1988-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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