Semiconductor laser device
文献类型:专利
作者 | KAGAWA HITOSHI; ISHII MITSUO |
发表日期 | 1988-10-31 |
专利号 | JP1988262885A |
著作权人 | MITSUBISHI ELECTRIC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To drive each light-emitting point independently, to prevent the generation of thermal relaxation and the thermal relaxation time and to improve laser radiant efficiency by connecting electrodes to respective light-emitting point of a semiconductor laser to a plurality of electrode patterns formed onto the surface of a radiator. CONSTITUTION:Electrically independent electrode patterns 10, 11 are shaped onto the surface of a radiator 1, and wires 12, 13 are bonded with the patterns 10, 11 while electrodes 14, 15 formed on the surface on the light-emitting point side of a semiconductor laser chip 2 are connected through junction down. When the wires 12, 13 are supplied with driving currents, the currents of the wire 12 are fed to the electrode 14 shaped to one side section of the chip 2 separated by a trench 5 through the pattern 10, and flow through a wire 8 from an electrode 6 through the light emission side of laser beams 3. Likewise, currents fed to the wire 13 flow through the wire 8 through the electrode pattern 11, the electrode 15 on the other side of the chip 2, the light emission side of laser beams 4 and the electrode 6. Accordingly, when the driving currents of the wires 12, 13 are controlled, laser beams 3 can be controlled. |
公开日期 | 1988-10-31 |
申请日期 | 1987-04-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70773] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | KAGAWA HITOSHI,ISHII MITSUO. Semiconductor laser device. JP1988262885A. 1988-10-31. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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