中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者KAGAWA HITOSHI; ISHII MITSUO
发表日期1988-10-31
专利号JP1988262885A
著作权人MITSUBISHI ELECTRIC CORP
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To drive each light-emitting point independently, to prevent the generation of thermal relaxation and the thermal relaxation time and to improve laser radiant efficiency by connecting electrodes to respective light-emitting point of a semiconductor laser to a plurality of electrode patterns formed onto the surface of a radiator. CONSTITUTION:Electrically independent electrode patterns 10, 11 are shaped onto the surface of a radiator 1, and wires 12, 13 are bonded with the patterns 10, 11 while electrodes 14, 15 formed on the surface on the light-emitting point side of a semiconductor laser chip 2 are connected through junction down. When the wires 12, 13 are supplied with driving currents, the currents of the wire 12 are fed to the electrode 14 shaped to one side section of the chip 2 separated by a trench 5 through the pattern 10, and flow through a wire 8 from an electrode 6 through the light emission side of laser beams 3. Likewise, currents fed to the wire 13 flow through the wire 8 through the electrode pattern 11, the electrode 15 on the other side of the chip 2, the light emission side of laser beams 4 and the electrode 6. Accordingly, when the driving currents of the wires 12, 13 are controlled, laser beams 3 can be controlled.
公开日期1988-10-31
申请日期1987-04-21
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70773]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORP
推荐引用方式
GB/T 7714
KAGAWA HITOSHI,ISHII MITSUO. Semiconductor laser device. JP1988262885A. 1988-10-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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