Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIHIRO |
| 发表日期 | 1988-11-10 |
| 专利号 | JP1988273388A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance the yield and the reliability of a semiconductor laser by forming a semiconductive metal bump perpendicular to the resonator direction in parallel with a light irradiating face on an electrode near the active layer of the laser as a packing in case of depositing a dielectric substance thin film on the irradiating face. CONSTITUTION:A striplike bump 3 of 4-12mum of width and 2-7mum of height is provided at a distance of 5-20mum from an irradiating face 2 perpendicularly to a resonator direction parallel to the face 2 on an electrode 2 near an active layer. When the bump 2 is retained by a spring 8, a gap between an Si bar 6 and the bar 6 of a semiconductor laser is blocked, a dielectric substance is rounded not to adhere to an electrode near the active layer. Thus, even after it is deposited, its bondability of a heat absorber due to fusion bonding is improved, its heat resistance is reduced, and its yield and reliability are improved. |
| 公开日期 | 1988-11-10 |
| 申请日期 | 1987-04-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70776]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIHIRO. Semiconductor laser. JP1988273388A. 1988-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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