Semiconductor light-emitting device
文献类型：专利
| 作者 | KOTAKI YUJI |
| 发表日期 | 1988-11-25 |
| 专利号 | JP1988288084A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To adjust oscillation wavelength without increasing coupling loss and element size by isolating currents injecting carriers to an active layer and currents controlling the refractive index of a guide layer between a third semiconductor layer and the guide layer. CONSTITUTION:A semiconductor light-emitting device has structure in which it is laminated through a photoelectric-converting active layer 5, a guide layer 3, which is coupled optically with the active layer 5 and to which a diffraction grating 2 is formed, and a third semiconductor layer 4 and currents I1 injecting carriers to the active layer 5 and currents I2 controlling the refractive index of the guide layer 3 are isolated between the third semiconductor layer 4 and the guide layer 3. Consequently, the refractive index of the guide layer 3 can be controlled by currents I2 separated from currents I1 injecting carriers to the active layer 5 even in a distributed feedback laser in which the active layer 5 is positioned at the upper section (or a lower section) of the diffraction grating 2, thus allowing the adjustment of oscillation wavelength by controlling the Bragg wavelength lambdaB of the diffraction grating 2. Currents using an electrode 11 as the positive side is flowed between electrodes 11, 12 and laser oscillation in a zone in wavelength of 55mum is conducted, currents employing an electrode 13 as the positive side are flowed between electrodes 13, 14, and oscillation wavelength can be controlled. |
| 公开日期 | 1988-11-25 |
| 申请日期 | 1987-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor light-emitting device. JP1988288084A. 1988-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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