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文献类型:专利
作者 | FUKUDA HIROKAZU; SHINOHARA KOJI; KAWABATA YOSHIO; NISHIJIMA YOSHITO; YAMAMOTO KOSAKU |
发表日期 | 1989-11-30 |
专利号 | JP1989056555B2 |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To prevent part of laser light from being reflected on the surface of a bonding agent by a method wherein a protrusion part having a width slightly wider than the width of a semiconductor laser element in the laser light emitting direction is formed on the upper surface of a heat dissipation substrate and the semiconductor laser element is thermally fixed by pressure on the protrusion part using the bonding agent. CONSTITUTION:A protrusion part 5, which has a width W slightly wider than the width P of a semiconductor laser element 2 and has a height of H, is formed on the upper surface of a heat dissipation substrate consisting of Cu, for example. That is, when an In piece, a little excessive in amount, to be used as a bonding agent 3 is placed on the protrusion part 5 and heated, the In piece is fused on the whole upper surface of the protrusion part, becomes highest at the central part by surface tension at that time and the form of a prescribed curved surface can be obtained. Then, the semiconductor laser element 2 is placed on the bonding agent 3 which has been formed and solidified in a protuberance with a prescribed width, and while the heat dissipation substrate 1 is heated by means of a bonding device, the laser element is buried and adhered in the bonding agent by thermocompression bonding. In this case, the pressing force of the bonding device is properly adjusted and the laser element is prevented form being buried in the bonding agent 3 so far as a part, from which laser light is emitted, in the vicinity of the luminous junction region 4 of the semiconductor laser element 2. |
公开日期 | 1989-11-30 |
申请日期 | 1987-07-02 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/70790] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOJI,KAWABATA YOSHIO,et al. -. JP1989056555B2. 1989-11-30. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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