Semiconductor device
文献类型：专利
| 作者 | ANDO SHINJI |
| 发表日期 | 1989-03-08 |
| 专利号 | JP1989061948A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To suppress inside stress when an electrode is formed and prevent stripping of a metal and the like as well, by forming a platinum layer which is relatively thin as a barrier metal at a barrier layer in the electrode structure of a semiconductor device. CONSTITUTION:An ohmic layer 2 is formed by laminating metal layers composed of an alloy of gold and germanium, nickel, gold, and the like on an n-type GaAs semiconductor substrate 1 and then a barrier layer 3 is formed by laminating a titanium layer 3a, a platinum layer 3b in order. Further a surface electrode layer 4 consisting of gold is formed by laminating on the above barrier layer 3 and a gold wire is connected on the above electrode 4 using bonding by heat- pressing its wire in the case of assembling. In this way an electrode structure having the platinum layer 3b as a barrier metal may suppress inside stress lower than that of the electrode structure having a molybdenum layer as the barrier metal when the electrode is formed and prevents stripping of a metal and the like as well. |
| 公开日期 | 1989-03-08 |
| 申请日期 | 1987-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ANDO SHINJI. Semiconductor device. JP1989061948A. 1989-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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