Semiconductor light emitting device
文献类型：专利
| 作者 | NANBARA SEIJI; HIGUCHI HIDEYO |
| 发表日期 | 1989-04-18 |
| 专利号 | JP1989099266A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To form the optical intensity distribution of a light emitting region and to obtain an LED having high coupling efficiency to an optical fiber by forming the substrate of the surface light emission type LED in a cup state, and covering a light irradiating window with a transparent electrode. CONSTITUTION:When a voltage is applied between a plasma electrode 2 and a minus electrode 1, a light is irradiated from an active layer 5, and radiated through a substrate 4 and a light irradiating window 3 externally. Here, since the substrate 4 is formed in a cup state and a transparent electrode 6 is formed thereon, its resistance is reduced at the center of the layer 5, and the distribution of an electric field becomes a circular arc state. In an example, a surface light emission type LED having transparent electrodes is exemplified, but transparent electrode may be employed in a surface light emission type semiconductor laser instead of the LED. |
| 公开日期 | 1989-04-18 |
| 申请日期 | 1987-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70798]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,HIGUCHI HIDEYO. Semiconductor light emitting device. JP1989099266A. 1989-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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