Semiconductor laser device
文献类型：专利
| 作者 | SHIOMOTO TAKEHIRO |
| 发表日期 | 1989-05-08 |
| 专利号 | JP1989115187A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve yield by forming recessed of width equal to those of mesa etching zones in the same number as that of the zones on a heat sink having solder, disposing the zones oppositely to the recesses, and mounting a semiconductor laser array on the heat sink. CONSTITUTION:Recessed 11 of width equal to those of mesa etching zone 4 are formed in the same number as that of the units corresponding to the zone 4 on a heat sink 10 having a solder 8, and the zone 4 are disposed oppositely to the recesses 11, and a semiconductor layer array 1 is mounted on the sink 10. Accordingly, the solder 8 pressed to the array 1 to be oozed sidewise is intruded into the recesses 11 of the sink 10 so as not to intrude into the zone 4 thereabove. Thus, a leakage current due to the intrusion of the material 8 into the zone 4 is eliminated to improve its yield. |
| 公开日期 | 1989-05-08 |
| 申请日期 | 1987-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70801]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SHIOMOTO TAKEHIRO. Semiconductor laser device. JP1989115187A. 1989-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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