Semiconductor laser device
文献类型：专利
| 作者 | TAMATOSHI KUNIYOSHI |
| 发表日期 | 1989-05-31 |
| 专利号 | JP1989138778A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve a surge absorbing effect and enable miniaturization of a mounting space by a method wherein a surge absorbing condenser is composed of such a structure that a semiconductor laser chip is attached to a submount formed of an insulator high in dielectric constant and the submount is attached to a heat dissipating block. CONSTITUTION:A semiconductor laser chip 1 is mounted on a superficial metal electrode 4 provided on a submount 3 which is formed of an insulator high in dielectric constant, and the submount 3 is attached to a heat dissipating block 11, which functions as a surge absorbing condenser. And, lead wires 5, 6, and 6 of Au or the like, electrode leads 8, 9, and 10, a stem 12, a cap 13, and a glass 14 are provided. By these processes, a condenser which has an surge absorbing effect is formed in parallel with the semiconductor laser chip 1, the condenser can be built in a semiconductor laser device. |
| 公开日期 | 1989-05-31 |
| 申请日期 | 1987-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70805]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAMATOSHI KUNIYOSHI. Semiconductor laser device. JP1989138778A. 1989-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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