Semiconductor laser device
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; EBE KOJI; SHINOHARA KOJI |
| 发表日期 | 1989-06-09 |
| 专利号 | JP1989147885A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To miniaturize a semiconductor laser device, by a structure wherein a semiconductor element to heat a semiconductor laser element is formed between the semiconductor laser element and a cooling bottom on which the laser element is to be mounted so that the semiconductor element is integrated with the semiconductor laser element. CONSTITUTION:A voltage is applied across electrodes 19 and 17 for driving semiconductor laser element, with the electrode 19 being positive while the electrode 17 being negative, to operate a semiconductor laser element 18 while a voltage is applied across a second P-N junction actuating electrode 16A and an electrode 17 to operate a semiconductor element 14. Thereby, the semiconductor element 14 is heated so that the heat produced in the element 14 is transferred to the laser element 18. On the other hand, when a voltage is applied across a first P-N junction actuating electrode 15A and a first electrode 13 to actuate a first P-N junction 15, with the obtained current-voltage characteristic in the current value being 10muA, the forward voltages at liquid nitrogen temperature and room temperature are 0.9V and 0.3V, respectively. Therefore, if the applied voltage across a second P-N junction 16 is controlled based on the voltage information in the first P-N junction 15 at the current value of 10muA, the semiconductor element 14 can be maintained at the predetermined heating temperature. Accordingly, the oscillation wavelength of the semiconductor laser element 18 can be controlled at the predetermined value. |
| 公开日期 | 1989-06-09 |
| 申请日期 | 1987-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,EBE KOJI,SHINOHARA KOJI. Semiconductor laser device. JP1989147885A. 1989-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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