Photoelectron device
文献类型：专利
| 作者 | TAKIZAWA YASUSHI; SASAYAMA ATSUSHI |
| 发表日期 | 1989-06-30 |
| 专利号 | JP1989166589A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectron device |
| 英文摘要 | PURPOSE:To develop current concentration and to rise the temperature of areas to be welded effectively and to conduct welding at a low voltage by providing a protrusion for welding on a receptacle welding section of the stem of a photoelectron device. CONSTITUTION:A package 2 of a laser device 1 consists of a stem 3 of a metal disc and a metal cap 4 fixed to cover the upper surface of the stem 3. A transparent lens 5 is fixed at the center of a ceiling section of the cap 4. A voltage is applied to the three leads 6 attached to the stem 3 to emit a laser beam 8. A welding protrusion 8 having a triangular cross section is provided in a ringed form on the upper flat side of the stem 3 of the laser chip so as to enclose the cap 4. The edge side of a ring-shaped coupling 10 of a receptacle 9 which guides a optical fiber cable is set on the protrusion 8. A voltage is applied between a stage 11 and a flange 12 to concentrate the current to the protrusion 8, thus rising the temperature thereof effectively. |
| 公开日期 | 1989-06-30 |
| 申请日期 | 1987-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70817]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TAKIZAWA YASUSHI,SASAYAMA ATSUSHI. Photoelectron device. JP1989166589A. 1989-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。