Semiconductor laser
文献类型：专利
| 作者 | YAMAGUCHI NOZOMI; MAEDA KOICHI; MIYAHARA HIROYUKI; MAKIGUCHI SHIGEE; ASANO SADAYOSHI |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989169986A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the generation of the accident of a short circuit due to the sag and deflection of a connecting wire by fixing a wiring substrate joining an electrode for a semiconductor laser element and an electrode leading-out lead to a heat sink. CONSTITUTION:A wiring substrate 10 and an L-shaped metallic piece 14 are interposed among an electrode for a semiconductor laser element 9 and electrode leading-out leads 5 as relay means. A wiring substrate 12 is interposed among each electrode for a photo-diode 13 for monitor and the electrode leading-out leads 5 as a relay means. Accordingly, the length of connecting wires 11 connecting the semiconductor laser element 9 and the electrodes for the photo-diode 13 for monitor and the electrode leading-out leads 5 may be shortened, thus eliminating the possibility of the generation of the accidents of short circuits due to contacts with other members by the sag and due to deflection of the connecting wires. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70819]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI NOZOMI,MAEDA KOICHI,MIYAHARA HIROYUKI,et al. Semiconductor laser. JP1989169986A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。