Semiconductor laser device
文献类型：专利
| 作者 | NISHIMURA MICHIYO |
| 发表日期 | 1989-07-26 |
| 专利号 | JP1989186690A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To get rid of a restriction in pitch and the number of pieces of arrays even though lasers become array-like, by providing an electrode and region isolating from a laser oscillation region. CONSTITUTION:An electrode pad region 16 which is necessary to extract electrodes toward the outside terminals by a wire bonding 17 process is isolated from a laser oscillation region 15 by a separating groove 14. As respective array lasers are driven independently, upper electrodes 11 are isolated along injection regions 12 and are connected over the separating groove 14 spatially by wiring to the region 16 and then, one plane of the separating groove 14 serves as the face of a resonator 13 for the lasers. In this way, a restriction in pitch or number of pieces of arrays is removed even though the lasers becomes array-like. |
| 公开日期 | 1989-07-26 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NISHIMURA MICHIYO. Semiconductor laser device. JP1989186690A. 1989-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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