Semiconductor laser device
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI |
| 发表日期 | 1989-07-26 |
| 专利号 | JP1989186689A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce short circuits between electrodes and the breakdown of elements on the occasion of manufacturing the elements, by disposing a plurality of semiconductor laser elements in the form of plane, in which one of resonance planes out of a pair of resonance planes facing each other is formed as a part of inner walls of holes in each semiconductor laser element. CONSTITUTION:One of resonance planes 17 out of resonance planes 16 and 17 in respective laser elements 11-15 is formed as a part of inner walls of holes 18 which are provided at disposition planes of respective laser elements 11-15. Thus, the above elements 11-15 are placed freely in order and extraction electrodes 11d-15d of the elements 11-15 can be disposed in such a way that they are placed freely in order at places other than the disposition parts of the elements and further, evenly in non- contact state. For example, out of the electrodes 11d-15d which are extracted independently from current injection regions 11a-15a, the electrodes located at both ends 11d and 15d are extracted toward both sides and the electrodes 12d-14d are extracted to keep away the holes 18 which have the resonance planes 17 as parts of the inner walls of them and then, wire bonding 20 is performed at suitable positions. Thus, short circuits between the electrodes 11d-15d and the breakdown of the elements 11-15 decrease. |
| 公开日期 | 1989-07-26 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70823]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI. Semiconductor laser device. JP1989186689A. 1989-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。