Semiconductor laser device
文献类型：专利
| 作者 | NANBARA SEIJI; HIGUCHI HIDEYO |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238086A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To increase laser beam output and improve optical coupling efficiency coupled with an optical fiber, by forming double current injection regions which prescribe current injection paths toward light emitting regions into the pattern of a V-shape when viewed from above of the region, and by forming respective regions along lines making each angle alpha with a front end face of each region. CONSTITUTION:Double current injection regions 30 and 32 are formed into a V-shaped pattern in the plan view in such a manner that both regions approach each other at the side of a front end face 20 and keep apart from each other at the side of a back end face 22. These regions are formed along lines having each angle alpha in reference to the front end face 20 so that its angle alphameets the conditional expression: alpha>tan(L/W) where L expresses the length of a resonator, W is stripe widths of respective current injection regions 30 and 32. As two places of current injection regions 30 and 32 are provided, two places of light emitting regions corresponding to respective current regions are produced at an active layer 6 as shown in codes 34 and 36. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70832]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,HIGUCHI HIDEYO. Semiconductor laser device. JP1989238086A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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