Semiconductor device
文献类型：专利
| 作者 | SEKIGUCHI TAKESHI; SHIGA NOBUO; AGAWA KEIGO |
| 发表日期 | 1989-11-21 |
| 专利号 | JP1989289129A |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To prevent the electric characteristics from deteriorating while facilitating the substrate alignment by a method wherein through-holes are made in the main surface of an insulating substrate loaded with IC containing photosemiconductor element to insert package penetrating terminal heads into the holes for connection. CONSTITUTION:Through-holes 131 are made in the peripheral parts of a ceramic substrate 13 by laser processing. Penetrating terminals are implanted passing through the bottom surface of a package 1 The heads of the terminals are inserted into the corresponding holes in the substrate 13 to be directly bonded by solder 13 for connecting the circuit on the substrate 13 to respective penetrating terminals 12. Since the array of the terminals 12 passes inside the substrate 13, the space inside the package can be made smaller than that of conventional package. The substrate 13 can be connected directly to the terminals 12 without using any wire or lead to produce no needless inductance. Furthermore, the substrate 13 can be automatically aligned with the terminals 12 simply by inserting the heads of the terminal 12 into the through-holes 13 |
| 公开日期 | 1989-11-21 |
| 申请日期 | 1988-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI TAKESHI,SHIGA NOBUO,AGAWA KEIGO. Semiconductor device. JP1989289129A. 1989-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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