Submount for semiconductor laser element
文献类型：专利
| 作者 | ISHII MITSUO; NAGAI SEIICHI; HASEGAWA KAZUYOSHI; TANAKA TOSHIO |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293691A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount for semiconductor laser element |
| 英文摘要 | PURPOSE:To enhance the reliability by a method wherein a ternary alloy of Sn, Ag and Sb is used as a solder agent for an outermost surface in order to eliminate a defect of the bonding strength and to keep a solder surface state stable. CONSTITUTION:A submount which is inserted and fixed, as a thermal stress relaxation material, between a semiconductor laser element and a metal block tor heat dissipation use is constituted in such a way that a barrier layer 2 composed of a Ti layer 21, an Ni layer 22 and an Ag layer 23 is formed on both faces of a conductive Si substrate 1 by evaporation or the like and that a layer 3 of a ternary alloy solder composed of Sn, Ag and Sb is formed on the barrier layer 2. Since this solder layer 3 is soft at a hardness of 3.5 Hv, a thermal stress strain which is exerted on the laser element fixed onto the submount is small. Since the layer 3 is hardly subjected to a thermal fatigue due to a heat cycle characteristic, a chip is not detached due to a defect of the bonding strength. Wince a surface state of the layer 3 is hard to change, the quantity of light which is incident on a photodiode for monitoring a laser beam output is not changed with the passage of time; a fluctuation in a characteristic can be reduced. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70841]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | ISHII MITSUO,NAGAI SEIICHI,HASEGAWA KAZUYOSHI,et al. Submount for semiconductor laser element. JP1989293691A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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