Semiconductor array laser device
文献类型：专利
| 作者 | KOKUBO YOSHIHIRO |
| 发表日期 | 1989-12-12 |
| 专利号 | JP1989307288A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor array laser device |
| 英文摘要 | PURPOSE:To enable coupling with not only adjacent stripes but also separate stripes by manufacturing a secondary diffraction grating in a surface running parallel with active-layer stripes in surfaces orthogonal to a surface including the active-layer stripes. CONSTITUTION:Since a secondary diffraction grating is manufactured in a surface parallel with stripes in surfaces orthogonal to a surface containing all active-layer stripes 3b, diffraction electro-magnetic waves by the secondary diffraction grating are propagated in the two directions of the direction along the stripes and the direction vertical to the surface to which the diffraction grating is prepared. Electromagnetic waves propagated in the direction vertical to the surface to which the diffraction grating is manufactured, in the electromagnetic waves are propagated to an adjacent active-layer stripe 3b, and one part is propagated in the direction of the active-layer stripe 3b by the secondary diffraction grating in the same manner, and coupled with an adjacent active- layer stripe 3b in an electromagnetic wave shape. Accordingly, the diffracted electromagnetic waves are coupled with all other stripes, thus stabilizing an oscillation transverse mode. |
| 公开日期 | 1989-12-12 |
| 申请日期 | 1988-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70844]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOKUBO YOSHIHIRO. Semiconductor array laser device. JP1989307288A. 1989-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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