Semiconductor laser
文献类型：专利
| 作者 | MATSUBARA HIROSHI |
| 发表日期 | 1990-01-18 |
| 专利号 | JP1990014592A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent the return light from outside from being incident on a light receiving surface of a photodiode by applying thickly a opaque resin to the top surface of and around a semiconductor laser chip except for its edge face. CONSTITUTION:The resin 8, which is of high viscosity and opaque for the laser beam, is applied on the top surface of and around a semiconductor laser chip, but not on both end faces which output the light, after completion of die bonding and wire bonding of the semiconductor laser chip By this, even if the return light reflected from an external optical system if incident on a laser package in this semiconductor laser, it is reflected when it strikes against the resin 8. Since the light is shielded no only by the semiconductor laser chip 1 but also by the resin 8, the whole light receiving surface of a photodiode 4 is shielded from the light. Therefore, such a semiconductor laser that the return light is not incident on the photodiode can be available without using any special components. |
| 公开日期 | 1990-01-18 |
| 申请日期 | 1988-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70852]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MATSUBARA HIROSHI. Semiconductor laser. JP1990014592A. 1990-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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