Manufacture of semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1990-01-25 |
| 专利号 | JP1990022882A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser at a good yield by a method wherein a heating and annealing process at a temperature higher than an upper limit of a temperature to be applied to a semiconductor laser pellet is added prior to a characteristic measuring and sorting process in order to accurately sort a good product. CONSTITUTION:A multilayer structure containing a diffraction grating and an active layer and a contact metal are formed on a wafer; a distributed feedback type semiconductor element is formed; after that, each element is separated into pellets; a dL/dI-I characteristic in a pellet state is sorted; an element which is kink-free up to 10mW at, e.g., 25 deg.C and an element containing a kink are sorted. After that, both pellets are annealed in an atmosphere of N2 at a temperature higher than an upper limit of a temperature to be applied to a semiconductor laser pellet, e.g., 300 deg.C, for 20 minutes; the characteristic is sorted in the same manner. Then, they are fused and bonded to an Si heat sink by using an AuSn solder; a wire bonding operation is executed; after that, the characteristic is sorted. Thereby, the dL/dI-I characteristic is preserved well; in an element which contains the kink after the annealing operation, a position and a shape of the kink are hardly changed. |
| 公开日期 | 1990-01-25 |
| 申请日期 | 1988-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70856]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Manufacture of semiconductor laser. JP1990022882A. 1990-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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