Semiconductor laser device
文献类型：专利
| 作者 | KONO MASAKI |
| 发表日期 | 1990-03-02 |
| 专利号 | JP1990063182A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To deal with high heat generation by assuring heat dissipation from a laser chip over the entire surface of the laser chip by filling a cap with gas such as fluorocarbon gas or liquid such as florinate (inactive gas). CONSTITUTION:A laser light emanates from a glass window 2 mounted on a cap A laser chip 5 is die-bonded to a sub-mount 4. A cap 1 block 3 and a monitor photodiode 6 are die-bonded to a stem 10. Additionally, these members are driven by a laser drive pin 7, a ground pin 8, and a monitor photodiode pin 9. At this time, the cap 1 is filled with gas such as fluorocarbon gas or liquid such as florinate (inactive). A current is conducted though the title semiconductor laser device and heat is generated around a region of a luminous point until lasing is attained. Dissipation of the heat is enhanced by using the gas or liquid filled in the cap. |
| 公开日期 | 1990-03-02 |
| 申请日期 | 1988-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KONO MASAKI. Semiconductor laser device. JP1990063182A. 1990-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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