Semiconductor laser device
文献类型:专利
| 作者 | HASEGAWA KAZUYOSHI; NAGAI SEIICHI |
| 发表日期 | 1990-04-11 |
| 专利号 | JP1990098987A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable fine adjustment of a position in the three directions of X, Y, Z while monitoring optical axis alignment, to reduce variations in coupling efficiency with optical fiber and to improve mass producibility by attaching a plate with a lens to a cap. CONSTITUTION:A heat sink 2 is assembled on a stem 6 so that a light emitting point of an LD chip 1 is subjected to alignment with a center axis of the stem 6. A cap 8 is provided with a plate 10 having a lens through a brazing material 9. Fine adjustment is performed to the cap 8 in the directions of X, Y making an LD emit light, optical axis alignment is monitored by a photodetector which is provided in opposition to a plate 3 equipped with a lens, and the cap 8 is fixed at a position whereon optical axis in the directions of X, Y is aligned. The brazing material 9 between the cap 8 and the plate 10 equipped with a lens is fused through heat up fixing the cap 8 in the directions of X, Y. Optical axis alignment state in the direction of Z axis is monitored, optical axis is aligned, cooling is applied, and the plate 10 with a lens is fixed. Coupling efficiency with optical fiber can be improved in this way. |
| 公开日期 | 1990-04-11 |
| 申请日期 | 1988-10-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70877] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HASEGAWA KAZUYOSHI,NAGAI SEIICHI. Semiconductor laser device. JP1990098987A. 1990-04-11. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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