中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者HASEGAWA KAZUYOSHI; NAGAI SEIICHI
发表日期1990-04-11
专利号JP1990098987A
著作权人MITSUBISHI ELECTRIC CORP
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To enable fine adjustment of a position in the three directions of X, Y, Z while monitoring optical axis alignment, to reduce variations in coupling efficiency with optical fiber and to improve mass producibility by attaching a plate with a lens to a cap. CONSTITUTION:A heat sink 2 is assembled on a stem 6 so that a light emitting point of an LD chip 1 is subjected to alignment with a center axis of the stem 6. A cap 8 is provided with a plate 10 having a lens through a brazing material 9. Fine adjustment is performed to the cap 8 in the directions of X, Y making an LD emit light, optical axis alignment is monitored by a photodetector which is provided in opposition to a plate 3 equipped with a lens, and the cap 8 is fixed at a position whereon optical axis in the directions of X, Y is aligned. The brazing material 9 between the cap 8 and the plate 10 equipped with a lens is fused through heat up fixing the cap 8 in the directions of X, Y. Optical axis alignment state in the direction of Z axis is monitored, optical axis is aligned, cooling is applied, and the plate 10 with a lens is fixed. Coupling efficiency with optical fiber can be improved in this way.
公开日期1990-04-11
申请日期1988-10-05
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/70877]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORP
推荐引用方式
GB/T 7714
HASEGAWA KAZUYOSHI,NAGAI SEIICHI. Semiconductor laser device. JP1990098987A. 1990-04-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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